Microsemi 2n6306 2n6308 free download

File name 2n6306_2n6308.pdf

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level JAN 2N6306 2N6308 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6306 2N6308 Units Collector-Emitter Voltage VCEO 250 350 Vdc Collector-Base Voltage VCBO 500 700 Vdc Emitter-Base Voltage VEBO 8.0 Vdc Collector Current IC 8.0 Adc Base Current IB 4.0 Adc Total Power Dissipation @ TC = +250C (1) 125 W PT @ TC = +1000C (1) 62.5 W Operating & Storage Temperature Range 0 Top, Tstg -65 to +200 C TO-3 (TO-204AA)* 1) Between TC = +250C and TC = +1750C, linear derating factor average = 0.833 W/0C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc 2N6306 V(BR)CEO 250 Vdc 2N6308 350 Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc 2N6306 ICEX 5.0